Download e-book for kindle: Carbon nanomaterials sourcebook. Volume 1, Graphene, by Klaus D. Sattler

By Klaus D. Sattler

ISBN-10: 1482252694

ISBN-13: 9781482252699

The Carbon Nanomaterials Sourcebook includes huge, interdisciplinary insurance of carbon nanomaterials, encompassing the entire scope of the field―from physics, chemistry, and fabrics technology to molecular biology, engineering, and medicine―in entire volumes.

Written in an academic type, this primary quantity of the sourcebook:

  • Focuses on graphene, fullerenes, nanotubes, and nanodiamonds
  • Describes the basic houses, progress mechanisms, and processing of every nanomaterial discussed
  • Explores functionalization for digital, power, biomedical, and environmental applications
  • Showcases fabrics with remarkable homes, synthesis equipment, large-scale creation suggestions, and alertness prospects
  • Provides the instruments helpful for realizing present and destiny know-how advancements, together with vital equations, tables, and graphs

Each bankruptcy is devoted to another kind of carbon nanomaterial and addresses 3 major parts: formation, homes, and functions. This setup permits quickly and straightforward seek, making the Carbon Nanomaterials Sourcebook: Graphene, Fullerenes, Nanotubes, and Nanodiamonds, quantity I a must-have reference for scientists and engineers.

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Additional resources for Carbon nanomaterials sourcebook. Volume 1, Graphene, fullerenes, nanotubes, and nanodiamonds

Example text

Role of the localized states in field emission of carbon nanotubes,” Phys. Rev. B 61 (2000): 9986–9989. , Oh, J. S. —Gate insulated nanoscale vacuum channel transistor,” Appl. Phys. Lett. 100 (2012): 213505. Herring, C. & Nichols, M. , “Thermionic emission,” Rev. Mod. Phys. 21 (1949): 185–270. Ho, L. , Micolich, A. , Hamilton, A. R. , “Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another,” Phys.

C) Measured I–V characteristics. 8 V. , Sci. 43 eV) (Giovannetti et al. 2008), and therefore, accumulation electrons build up more readily at low voltage for the Ga-only sample case. 11). 1) well corresponds to the ratio of channel currents at the same bias (148 nA vs. 53 nA). As bias voltage is increased over the flat band voltage, accumulation electrons build up fast, ensuing electron emission at cathode and space charge build-up in the void channel. 9). 11 Accumulation electron density (ns = Qs/q) in a graphene/SiO2/Si (GOS) (or MOS) capacitor structure calculated as a function of applied bias voltage V for 0–3 V.

Lei, W. , “Highly electron transparent graphene for field emission triode gates,” Adv. Funct. Mater. 24 (2014): 1218–1227. Lide, D. , CRC Handbook of Chemistry and Physics, 87th ed. (CRC Press, Boca Raton, FL, 2006). , Tomasik, M. R. , “Graphene oxidation: Thickness-dependent etching and strong chemical doping,” Nano Lett. 8 (2008): 1965–1970. , “Quantum capacitance devices,” Appl. Phys. Lett. 52 (1988): 501–503. , Kim, H. , “A review of chemical vapor deposition of graphene on copper,” J. Mater.

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Carbon nanomaterials sourcebook. Volume 1, Graphene, fullerenes, nanotubes, and nanodiamonds by Klaus D. Sattler

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